can U Please give me the info about  "Gallium Arsenide Technology"?
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hi there. may be I can help you a little bit. I am taking a class about III-V compound right now. so what I got is this technology is good as optoelectronic. where in elemental devices such as Sillicon is not that good, therefore usually we use III-V compund such as GaAs as laser diode or something that has connection with light emitting or light receiver. but this explanation is still too general. I think if I am not misunderstood that it has better reception for photon is because the EL2 (electrical Level2) deep level which is relatively very sensitive to light. hope this is help you a little bit.
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Hi,\n\nIt stands for metal oxide semiconductor field effect transistors. In the pass, people use metal material (aluminum) as the gate and oxide as insulator. That's why it is called metal-oxide. And it uses semiconductor to achieve the on/off function or amplification operations through the electric field. That's use it is called field effect transistors. Transistors means "trans-resistors (means changing resistance)". \n\n\nIn summary, by applying voltage to the metal gate, through the oxide insulator, we can achieve "trans-resistor" effect in the semiconductor due to the electric field. That's why we have MOSFET - Metal-oxide-semiconductor field effect transistors.\n\nBut today, people are using poly-silicon as the gate material. But we continue to name it as MOSFET.\n\nLet us know if you have more questions.\n\nKodKodKod Learning Consulting\nhttp://www.kodkodkod.com
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In some cases, yes, depending on what other elements are combined, however a mixture of gallium arsenide is found in almost every color.
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here is all the information you need. \nhttp://www.worldaccessnet.com/~dcmurphy/620/620tech2.htm
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Try this: http://www.rp-photonics.com/pockels_cells.html
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SILICON AND GERMANIUM ARE THE SEMICONDUCTOR MATERIALS WHICH  ARE USED IN THE MANUFACTURE OF THE DIODES AND OTHER ELECTRONIC  COMPONENTS. GERMANIUM COMES FIRST IN THE PERIODIC TABLE WHILE SILICON COMES NEXT.  GERMANIUM HAS LOW CUTOFF POINT THAN SILICON.
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A semiconductor is a substance, usually a solid chemical element or compound, that can conduct electricity under some conditions but not others, making it a good medium for the control of electrical current. Its conductance varies depending on the current or voltage applied to a control electrode, or on the intensity of irradiation by infrared (IR), visible light, ultraviolet (UV), or X rays. \nThe specific properties of a semiconductor depend on the impurities, or dopants, added to it. An N-type semiconductor carries current mainly in the form of negatively-charged electrons, in a manner similar to the conduction of current in a wire. A P-type semiconductor carries current predominantly as electron deficiencies called holes. A hole has a positive electric charge, equal and opposite to the charge on an electron. In a semiconductor material, the flow of holes occurs in a direction opposite to the flow of electrons.\n\nElemental semiconductors include antimony, arsenic, boron, carbon, germanium, selenium, silicon, sulfur, and tellurium. silicon is the best-known of these, forming the basis of most integrated circuits (ICs). Common semiconductor compounds include gallium arsenide, indium antimonide, and the oxides of most metals. Of these, gallium arsenide (GaAs) is widely used in low-noise, high-gain, weak-signal amplifying devices.\n\nA semiconductor device can perform the function of a vacuum tube having hundreds of times its volume. A single integrated circuit (IC), such as a microprocessor chip, can do the work of a set of vacuum tubes that would fill a large building and require its own electric generating plant.
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I think you're either talking about phonons, which are related to surface acoustic waves and atomic vibrations in crystals, or photonics, which is technology involving electro-optical devices and concepts. So take it from here.
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http://www.bell-labs.com/\n\nhttp://en.wikipedia.org/wiki/Bell_Labs
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go here for information on IT\nhttp://en.wikipedia.org/wiki/Information_technology\npeace,\nRebel (Roberta)\nIllinois,USA
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http://en.wikipedia.org/wiki/Diode
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http://en.wikipedia.org/wiki/Nanotechnology
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Titanium is amongst them. Tungsten and wolfram too. That's all i can think off right now.
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I have read that future nanotechnology may involve many small machines building small structures.\n\nToday, though, nanotechnology isn't quite that exotic.  For example, lithography is often used in microprocessor production to create patterns on semiconductor surfaces by focusing light through a pattern mask.  The surface is covered by a material called photo-resist that changes when hit by the light.  Then the photo-resist is etched away with acid leaving the very small pattern that was focused on the surface.  Then a layer of material is applied (metal for wire connections, transistor parts, etc).  Many additional layers are required before the processor is completed.\n\nAlso, there are other technologies such as electron beam lithography, molecular beam epitaxy and probably quite a few others.  Basically, it is just shooting a tighly controlled beam of electrons or molecules at a surface to create patterns.\n\nI think there are other areas of nanotech involving chemistry and microbiology.  I just know a few things about electrical engineering nanotech, though.\n\nhttp://en.wikipedia.org/wiki/Nanotechnology\nhttp://en.wikipedia.org/wiki/Photolithography\nhttp://en.wikipedia.org/wiki/Molecular_beam_epitaxy\nhttp://en.wikipedia.org/wiki/Electron_beam_lithography
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LGA - Land Grid Array Technology\n\nPentium® 4 Processor High-Volume Land-Grid-Array Technology: Challenges and Future Trends \n \n \n \nTechnology Drivers \nMechanical, electrical, and thermal performance requirements of future Intel microprocessors are the technology drivers for microprocessor package and socket technology. In 2001, it was determined that the existing desktop socket, mPGA478, was insufficient to address the signal count and power delivery demands for upcoming processors on the roadmap. The LGA775 microprocessors and sockets in production today were the resulting solution to address these capability limitations. Determination of new form factors and sockets required a rigorous multidisciplinary study to identify and assess viable options. Customer feedback was then incorporated to close the final direction.\n\nThe input/output (I/O) signal requirements were identified as a combination of signal count and a given signal-to-ground ratio with a net performance capable of greater than 1000MT/s. Organic package technology has been utilized due to improved dielectric material properties and lower cost as compared to ceramic packages, and as such was a requirement.\n\nPower delivery demands may generally be broken down into two parts: electrical parasitic attributes required to meet the power delivery needs of the processor, and the capability to carry the necessary current reliably. The electrical requirements are subdivided into resistance and inductance requirements. In particular, the resistance requirements are critical for carrying current in excess of 100A. The targeted improvement in the resistance path was a 50% improvement over the existing mPGA478 socket used by the 130nm and 180nm Pentium® 4 microprocessors. Combined with the thermal target of socket self-heating power, and the resistance capability of options considered, the pin count demand more than doubled that of the mPGA478. To address this increase in performance, technology options covering different power delivery topologies were considered, including pin grid array, land grid array, and specialized power connectors with multiple power paths. Voltage regulation placement and the package/socket power pinout and design were additional factors considered. \n\nWhile LGA sockets have been in use by high-end servers, implementations have used proprietary technologies and were not scaled to high volume. These LGA sockets also utilize double-compression LGA technology requiring gold-plated motherboard lands and ceramic microprocessor packages. A particular implementation of LGA utilizing stamped-metal contacts was identified that offered several advantages over previous versions of LGA. The use of stamped-metal contacts allowed directly leveraging conventional high-volume socket manufacturing equipment and processes, which also made it possible to leverage PGA socket surface-mount capability.\n\nThe primary benefit of LGA technology is that it allows for pitch scaling below PGA. Since desktop systems target four-layer motherboards for optimal cost, pitch reduction and contact layout were optimized for assembly of the package, socket, and motherboard under this boundary condition. While square grid or interstitial grid pitches have been used by conventional PGA and LGA sockets, a rectangular-grid mixed pitch of 1.09mm x 1.17mm was identified as optimal from board routing and assembly standpoints. This represents a 26% contact density improvement and a 16% reduction in effective contact resistivity over PGA technology. This benefit is pronounced when viewed at the package size level: a 62% increase in pin count results in a package area increase of only 15% over the 35mm mPGA478 packages. Zero-Insertion-Force (ZIF) insertion is a benefit, as the risk of pin damage and pin true position increase with pin count for PGA options. Figure 3 shows the LGA775 and mPGA478 packages. \n\n\n\nFigure 3: LGA775 and mPGA478 packages \n\n\n\nThe largest challenge for L
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Carbon (diamond) Silicon Germanium.\nMany more with doping and compounds\n\nhttp://en.wikipedia.org/wiki/List_of_semiconductor_materials
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Integrated circuit technology