what is the difference between n-type and p-type semiconductor?
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In a p-type semiconductor, the III group element of the periodic table is added as a doping element, whereas in n-type the V group element is the doping element. In the n-type semiconductor, electrons are majority carriers, and holes are minority carriers. ...
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The major difference between PN junction and the Zener diode is that the PN junction diode allows current to pass only in the forward direction, whereas the Zener diode allows the current to flow both in the forward and the reversed direction.
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An NPN transistor has a piece of P-type silicon (the base) sandwiched between two pieces of N-type (the collector and emitter). In a PNP transistor, the type of the layers are reversed. Below is a typical cross section of a transistor.
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So they are all based on the same chip, the difference between the different versions are fairly small. Mainly the non standard models offer better cooling, and some may offer modified power delivery (meaning you could possibly over clock them further than the stock version).
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In a semiconductor, current is produced in two different ways. There are the electron current and the hole current. The electron current is produced when electrons are pushed from the negative terminal into the semiconductor. Holes are positions in the semiconductor atoms that can be but are not occupied by electrons.
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A NPN transistor has electrons as majority charge carriers whereas the PNP transistor has holes as majority charge carrier. The mobility of electrons is better than mobility of holes. So a NPN transistor is faster in operation than a PNP transistor. ... Electrons are better when compared to holes so (npn) is preferred.
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PMOS transistors operate by creating an inversion layer in an n-type transistor body. This inversion layer, called the p-channel, can conduct holes between p-type "source" and "drain" terminals. The p-channel is created by applying voltage to the third terminal, called the gate.
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A PNP works in a same but opposite fashion. The base still controls current flow, but that current flows in the opposite direction -- from emitter to collector. Instead of electrons, the emitter emits "holes" (a conceptual absence of electrons) which are collected by the collector.
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These nMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type "source" and "drain" terminals. The n-channel is created by applying voltage to the third terminal, called the gate.
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Bipolar junction transistors are solid state, three-pin (base, collector and emitter) components, constructed from three layers of silicon. There are two main types of transistor, namely PNP (positive-negative-positive) and NPN (negative-positive-negative).
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The reason why your doped semiconductor carries a neutral charge is because it has equal number of electrons as there are protons, be it boron doped or phosphorous doped. While the whole crystal remains neutral, by doping you are vastly increasing the conductivity of the semiconductor.
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The flow of current in a semiconductor are of two types namely, drift and diffusion current. The current produced due to the movement of charge carriers by external applied voltage is known as drift current. Whereas, the current produced due to the change in concentrations is called diffusion current.
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Due to larger atomic size it does not form pi bonds with itself. Hence, in P4 molecule P forms sigma bond with other phosphorous atoms. ... So, since the force of attraction between Phosphorous molecules is high and that between Nitrogen molecules is low, Phosphorous is a solid while Nitrogen is a gas.
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Doping materials are called impurities because. they make semiconductors less pure. they alter the crystal structure. they change chemical properties.
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Semiconductors fall into two broad categories: Intrinsic semiconductors are composed of only one kind of material; silicon and germanium are two examples. These are also called “undoped semiconductors” or “i-type semiconductors.
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In semiconductor manufacturing, the International Technology Roadmap for Semiconductors defines the 7 nm process as the MOSFET technology node following the 10 nm node. It is based on FinFET (fin field-effect transistor) technology, a type of multi-gate MOSFET technology.
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['Crystalline silicon (c-Si)', 'Amorphous silicon (a-Si)', 'Gallium arsenide (GaAs)', 'Organometallics (soluble platinum)']